Description: MRC 943 3 Target In-Line Sputtering
(943)
High throughput production. Microprocessor control for fully automated operation. Process chamber with separate CTI-8 Cryo Pump. Loadlock with CTI-8 High Vacuum Cryo Pump. Loadlock heater, six quartz radiant heat lamps. Holds 12 1/4" x 12 1/4" substrate pallet. Etch platform for sputter etch. CRT display for process status. Target size: 4 3/4" x 14 7/8." 208 V, 3 Phase, 60 Hz.
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